SIMPLIS IGBT Options

The default test conditions for the Extract IGBT Parameters dialog can be set from the Command Shell  menu File > Options > SIMPLIS Options... Three advanced options are hidden by default until you click the Show Advanced Options button.

IGBT Extracted Parameters

Test Condition Default Value Units Description
Collector to emitter voltage 2k V The peak off-state voltage seen by this device.
Used to extract capacitance for model levels which include parasitic capacitance.
Breakdown is not modeled.
Gate drive voltage 15 V Gate to emitter voltage to extract RDS(on).
Collector current 200 A Peak collector current to extract the RDS(on) and forward gain of the IGBT.
Model temperature 25 °C Temperature used for all extraction simulations.
Model level 0   Model complexity. For information on choosing the model level, see IGBT Model Levels.
Limit maximum off resistance Checked none Limits the off resistance for the IGBT. For some SPICE models, this will produce a SIMPLIS model which runs faster.
Maximum off resistance 100Meg The maximum off resistance of the IGBT switch. This value is used only if "Limit maximum off resistance" is checked.

Additional Options

Option Default Value Description
Initial Place Preference Extracted Indicates which model type (Extracted or User-defined) is selected when you place the device on the schematic.
Automatically copy extracted parameters to User-defined parameters Checked If checked the extracted parameters overwrite the user-defined parameters each time a model is extracted.

If unchecked, the user-defined parameters are never overwritten.

Number of anti-parallel diode segments 3 Sets the number of segments for the Body diode extraction algorithm.

If you select 2, the algorithm models on and off resistance.

If you select 3, the algorithm models a transition resistance in between the on and off segments.

Debug
Output parameter ... Unchecked If checked, the debug statements are automatically written to the deck file.

The Command shell menu SIMPLIS > Edit Netlist (after preprocess) opens the .deck file for editing. An example set of debug statements can be found in the Deck-Level Debug section.

Advanced options Hidden Click this button to view or change the advanced options.

For more information, see Advanced Options.

Deck-Level Debug

If you check "Output parameter debug statements to the deck file," each IGBT in the design has a debug report inserted in the .deck file when you run a simulation. This debug report displays the calculated values for each major parameter in a formatted table. You can edit the .deck file with the Command shell menu SIMPLIS > Edit Netlist (after preprocess) . A sample debug report is shown below:

***SIMPLIS DEBUG EXTRACTED IGBT START*******************************************
***                                                                          ***
*** Device with REF : Q1                                                     ***
***                                                                          ***
*** Extracted from SPICE model: ga100ts60u                                   ***
***                                                                          ***
********************************************************************************
*
* Model Extraction Parameters
*
* VCE_PEAK : 980
* ICE_PEAK : 121
* VGEON : 15
* TEMP : 25
* LEVEL : 0
* LIMIT_MAX_ROFF : 1
* MAX_ROFF : 100Meg
*
* Conduction Parameters
*
* RCEON : 5.29132m
* ROFF : 99.4483Meg
* VCE_SAT : 1.0016
*
* Forward Gain Parameters
*
* VT0 : 5.49998
* HYSTWD : 549.998m
*
* Body Diode Parameters
*
* BD_NSEG : 4
* R BODY SEG#1 : 1
* R BODY SEG#2 : infinite
* R BODY SEG#3 : 5.70534
* R BODY SEG#4 : 4.45657
*
* Body Diode V-I Conduction Points
* 
* VD0 : -10.001k
* IBD0 : -1
* VD1 : -10k
* IBD1 : 0
* VD2 : 921.689m
* IBD2 : 0
* VD3 : 2.62976
* IBD3 : 299.381m
* VD4 : 540.54
* IBD4 : 121
*
* Gate Resistance
*
* RG : 2.35536
*
* Gate - Emitter Capacitance Parameters
*
* CGE : 9.86469n
*
* Collector - Gate Capacitance Parameters
*
* CCG SEG#1 : 10.187n
* CCG SEG#2 : 1.88787n
* CCG SEG#3 : 45.3913p
* CCG SEG#4 : 21.6896p
*
* Collector - Gate Charge V-Q Points
*
* CCG_NSEG : 4
* VCCG0 : 0
* QCCG0 : 0
* VCCG1 : 788.368m
* QCCG1 : 8.0311n
* VCCG2 : 23.4582
* QCCG2 : 50.8289n
* VCCG3 : 392
* QCCG3 : 67.5575n
* VCCG4 : 980
* QCCG4 : 80.311n
*
* Collector - Emitter Capacitance Parameters
*
* CCE SEG#1 : 4.63354n
* CCE SEG#2 : 1.25002n
* CCE SEG#3 : 67.1654p
* CCE SEG#4 : 32.248p
*
* Collector - Emitter Charge V-Q Points
*
* CCE_NSEG : 4
* VCCE0 : 0
* QCCE0 : 0
* VCCE1 : 2.22327
* QCCE1 : 10.3016n
* VCCE2 : 42.4423
* QCCE2 : 60.576n
* VCCE3 : 392
* QCCE3 : 84.0542n
* VCCE4 : 980
* QCCE4 : 103.016n
*
********************************************************************************
***                                                                          ***
*** Device with REF : Q1                                                     ***
***                                                                          ***
*** Extracted from SPICE model: ga100ts60u                                   ***
***                                                                          ***
***SIMPLIS DEBUG EXTRACTED IGBT END*********************************************